Southeast Asia Information Port News (www.dnyxxg.com) – On November 6th, it was learned from the Institute of Electronic Engineering, China Academy of Engineering Physics, that the institute, in collaboration with the Microsystems Terahertz Research Center, Sichuan University, and Xi'an Jiaotong University, has achieved a major breakthrough in the study of radiation effects in multilayer ceramic capacitors (MLCCs).
It is understood that the research team has for the first time discovered and systematically revealed the low-dose-rate damage enhancement effect (ELDRS) and damage mechanism of MLCCs under continuous irradiation, completely overturning the traditional understanding that "ceramic capacitors are not radiation-sensitive." The relevant research results have been published in the internationally renowned academic journal *Nature Communications*.
As a core component of electronic systems, MLCCs have long been considered to possess strong radiation resistance. However, with the miniaturization of devices and the continuous reduction in dielectric layer thickness, the electric field intensity they withstand continues to increase, making radiation-induced material defects and performance evolution problems increasingly prominent.
Through in-situ irradiation experiments, the research team has for the first time clearly demonstrated the capacitance degradation phenomenon of MLCCs under continuous gamma irradiation and discovered a significant ELDRS effect—that is, the damage to the device is more severe under low-dose-rate irradiation compared to high-dose-rate irradiation.
Furthermore, this study also revealed for the first time the "step recovery effect" of MLCCs after irradiation cessation, providing a new perspective for a deeper understanding of the performance degradation laws of electronic devices in special radiation environments such as aerospace and nuclear industries, and laying a theoretical foundation for the subsequent design and fabrication of radiation-resistant MLCCs. (End)
